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forward voltage 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 D4SBL20U pulse measurement per diode tc=150 c [typ] tc=25 c [typ] forward voltage v f [v] forward current i f [a]
10 100 D4SBL20U 1 10 100 0.05 0.5 0.2 20 50 5 2 200 500 2000 5000 0.02 0.05 0.5 0.2 20 5 2 0.005 0.002 junction capacitance reverse voltage v r [v] junction capacitance cj [pf] f=1mhz tc=25 c typ per diode
0 2 4 6 8 10 0 1 2 3 4 5 D4SBL20U forward power dissipation tj = tjmax sin average rectified forward current i o [a] forward power dissipation p f [w]
0 1 2 3 4 5 6 7 0 20 40 60 80 100 120 140 160 D4SBL20U derating curve sine wave r-load with heatsink sin tc tc heatsink case temperature tc [ c] average rectified forward current i o [a]
0 0.5 1 1.5 2 2.5 3 0 20 40 60 80 100 120 140 160 D4SBL20U derating curve v r = v rm sine wave r-load free in air sin pcb ambient temperature ta [ c] average rectified forward current i o [a] glass-epoxy substrate soldering land 5mm f
peak surge forward capability 0 20 40 60 80 100 120 1 10 100 D4SBL20U 2 5 20 50 i fsm 10ms 10ms 1 cycle number of cycles [cycles] peak surge forward current i fsm [a] non-repetitive, sine wave, tj=25 c before surge current is applied

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